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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES * Super low on-state resistance: RDS(on)1 = 11 m MAX. (VGS = -10 V, ID = -42 A) RDS(on)2 = 16 m MAX. (VGS = -4.0 V, ID = -42 A) * Low input capacitance: Ciss = 7500 pF TYP. (VDS = -10 V, VGS = 0 V) * Built-in gate protection diode Note TO-220SMD package is produced only in Japan (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg -60 V V A A W W C C A mJ (TO-262) m 20 m 83 m 332 160 1.5 150 -55 to +150 -50 250 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14655EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark 5 shows major revised points. (c) 2000, 2001 2SJ607 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD= -48 V VGS = -10 V ID = -83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/ s TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = MIN. TYP. MAX. -10 UNIT A A V S m 20 V, VDS = 0 V -1.5 45 -2.0 90 9.1 11 7500 1800 430 23 16 340 160 188 30 48 1.0 64 150 m 10 -2.5 VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -42 A VGS = -10 V, ID = -42 A VGS = -4.0 V, ID = -42 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -30 V, ID = -42 A VGS = -10 V RG = 0 11 16 m m pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = -20 0 V - ID VDD BVDSS VDS 50 L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD VDS (-) 90% 90% 10% 10% VGS (-) VGS Wave Form 0 10% VGS 90% IAS VGS (-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA 50 RL VDD PG. 2 Data Sheet D14655EJ3V0DS 2SJ607 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 200 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 80 60 40 20 0 PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 160 120 80 40 0 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA -1000 ID(pulse) PW = 10 ID - Drain Current - A 10 0 -100 R ( DS on ) Lim ite d ID(DC) Po m s Lim we DC ite r Di d ss ipa tio n 10 1 s s m s -10 -1 -0.1 TC = 25C Single Pulse -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 83.3C/W 10 1 Rth(ch-C) = 0.78C/W 0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14655EJ3V0DS 3 2SJ607 FORWARD TRANSFER CHARACTERISTICS -1000 -300 -240 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A ID - Drain Current - A -100 VGS = -10 V -180 -120 -60 -10 -4.5 V -4.0 V -1 TA = -55C 25C 75C 125C VDS = -10 V Pulsed -5 -4 -0.1 -1 -2 -3 0 Pulsed 0 -1 -2 -3 -4 -5 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S 1000 100 RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ID = -83 A -42 A -17 A 10 10 TA = 125C 75C 25C -55C VDS = -10 V Pulsed -0.1 -1 -10 -100 ID - Drain Current - A 1 0.1 -0.01 0 0 -2 -4 -6 -8 -10 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed -4.0 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -10 V ID = -1 mA 16 VGS = -4.0 V -4.5 V -10 V VGS(off) - Gate Cut-off Voltage - V -100 -1000 -3.0 12 -2.0 8 4 -1.0 0 -1 -10 0 -50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - C 4 Data Sheet D14655EJ3V0DS 2SJ607 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 Pulsed 16 VGS = -4.0 V -4.5 V -10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1000 Pulsed ISD - Diode Forward Current - A -100 VGS = -10 V -4.0 V 0V 12 -10 8 4 ID = -42 A -50 0 50 100 150 Tch - Channel Temperature - C -1 0 -0.1 0 -0.5 -1.0 -1.5 -2.0 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz td(off) Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 100 td(on) 10 tr tf 1000 Coss Crss 100 -0.1 -1 -10 -100 1 -0.1 VDD = -30 V VGS = -10 V RG = 0 -1 -10 -100 ID - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -12 -60 ID = -83 A -50 -40 -30 -20 -10 0 0 VDD = -48 V -30 V -12 V VGS -10 -8 -6 -4 -2 0 200 -1000 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS - Single Avalanche Current - A VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V -100 IAS = -50 A EAS -10 VDD = -30 V RG = 25 VGS = -20 0 V 100 =2 50 mJ VDS 40 80 120 160 -1 10 1m 10 m QG - Gate Charge - nC L - Inductive Load - H Data Sheet D14655EJ3V0DS 5 2SJ607 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 VDD = -30 V RG = 25 VGS = -20 0 V IAS -50 A Energy Derating Factor - % 140 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C 6 Data Sheet D14655EJ3V0DS 2SJ607 5 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 3.00.3 10.6 MAX. 10.0 TYP. 4.8 MAX. 2) TO-262 (MP-25 Fin Cut) 1.00.5 3.60.2 5.9 MIN. 4.8 MAX. 1.30.2 1.30.2 10 TYP. 15.5 MAX. 4 1 2 3 4 123 6.0 MAX. 1.30.2 1.30.2 12.7 MIN. 12.7 MIN. 8.50.2 0.750.1 2.54 TYP. 0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.80.2 0.750.3 2.54 TYP. 0.50.2 2.54 TYP. 2.80.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-263 (MP-25ZJ) 10 TYP. 4 4.8 MAX. 1.30.2 4) TO-220SMD (MP-25Z) 10 TYP. 4 Note 4.8 MAX. 1.30.2 1.00.5 8.50.2 1.00.5 1 1.40.2 0.70.2 2.54 TYP. 2 3 1 TY P. T . YP 2 3 1.10.4 5.70.4 3.00.5 8.50.2 1.40.2 0.50.2 0.750.3 2.54 TYP. 0 .5R 2.54 TYP. 0.8 R .8 2.54 TYP. 0 0 .5R TY R P. P. TY 0.50.2 2.80.2 Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Gate Body Diode Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source 2.80.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) Data Sheet D14655EJ3V0DS 7 2SJ607 * The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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